D. S. Poloskin

Работ: 1

Russian Academy of Sciences

1. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

   V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000045