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G. N. Talalakin

Работ: 5

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Distribution of Defects in InAs<sub>1-x-y</sub>Sb<sub>x</sub>P<sub>y</sub>-InAs DHs

    T. S. Argunova, R. N. Kyutt, B. A. Matveev +3

    СтатьяAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1991Цитирований: 0
    ABI

  2. Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

    N. V. Zotova, S. A. Karandashev, B. A. Matveev +3

    СтатьяAdvanced Optical Sensing TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  3. Fiber-optic detector using a mid-infrared diode laser and an acoustooptic modulator

    N. V. Zotova, S. A. Karandashev, L. A. Kulakova +4

    СтатьяPhotonic and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  4. Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0
    ABI

  5. Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1998Цитирований: 0
    ABI