A. Kryganovski

Работ: 1

Russian Academy of Sciences

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000163