S. Dadamuhamedov

Работ: 3

Physical Technical-Institute, Uzbek Academy of Sciences, Tashkent, Uzbekistan

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   СтатьяSemiconductor materials and interfaces2005Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.424565

2. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000252

3. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626