A. A. Usmonov

Работ: 2

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

1. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

   М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

   СтатьяSilicon and Solar Cell TechnologiesInorganic Materials2022Цитирований: 8

   ABIABI:AkademIndex/openalex/2022.article.000633

2. Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

   Zikrillayev Kh. F., K. S. Ayupov, G. H. Mavlonov +2

   СтатьяSilicon and Solar Cell TechnologiesФизика и техника полупроводников2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2022.article.000912