Khusniddin J. Matchonov

Работ: 4

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.290705

2. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001723

3. Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +3

   СтатьяIon-surface interactions and analysisEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.001644

4. Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +2

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.015874