N. B. Khaytimmetov

Работ: 2

Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Republic of Uzbekistan

1. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003369

2. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   СтатьяSilicon and Solar Cell TechnologiesE3S Web of Conferences2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005652