О. П. Толбанов

Работ: 2

National Research Tomsk State University, Russian Federation, Tomsk city, 634050 Lenina Avenue, 36

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   СтатьяSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000898

2. The Study of Structure, Electrophysical, Physicomechanical and Optical Properties of Gaas with Oxygen Impurities and Doped Chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   ПрепринтGaN-based semiconductor devices and materialsSSRN Electronic Journal2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.preprint.000087