А.А. Рахимов

Работ: 2

Institute of Ion-Plasma and Laser Technologies of Uzbek Academy of Sciences

1. Oxide layer growth on silicon substrates: effects of temperature and surface preparation

   X. B. Ashurov, M. M. Adilov, A. A. Ismatov +1

   СтатьяSemiconductor materials and devices«Узбекский физический журнал»2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.002873

2. Analysis of Temperature-Dependent Surface Properties in the Ni/SiO2/Si System During Electron Beam Deposition

   А.А. Рахимов, I. Kh. Khudaykulov, A. A. Ismatov +1

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009029