Статья

Behavior of excess currents in n-type gallium arsenide tunnel diodes

A. P. VyatkinV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, TomskV. A. GlushchenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, TomskR. P. ParkhomenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, TomskAne PastorV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, Tomsk

Russian Physics Journaljournal1981en

ABI

Аннотация

Аннотация отсутствует.

Темы

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Advancements in Semiconductor Devices and Circuit Design

Идентификаторы

DOI: 10.1007/bf00891607

Цитирования и источники

Цитирований: 0Использованных источников: 4

Показатели — AkademScholar · Скоро