Статья

Transient effects in thin aluminum films in the resistive state

V. V. StupakovDonetsk Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRV. Yu. TarenkovDonetsk Physicotechnical Institute, Academy of Sciences of the Ukrainian SSR

Soviet Journal of Low Temperature Physicsjournal1981en

ABI

Аннотация

Results of an experimental study are presented pertaining to anomalies in the static characteristics of “dirty” aluminum films at temperatures near the superconducting transition point. Processes of interaction of such films with intrinsic and external electromagnetic fields were studied. Here the causes of and the conditions for the existence of a coherent structure are analyzed.

Темы

Quantum and electron transport phenomena Semiconductor Quantum Structures and Devices Semiconductor materials and devices

Идентификаторы

DOI: 10.1063/10.0030479

Цитирования и источники

Цитирований: 0Использованных источников: 6

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