Статья

On the possibility of a flare-up of discrete exciton absorption structure in n-CdxHg1−xTe crystals in a magnetic field

V. I. Ivanov-OmskiĭIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RS. I. KokhanovskiǐIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RR. P. SeysyanIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RV. A. SmirnovIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RV. A. YukishIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RSh. U. YuldashevIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RAl. L. ÉfrosIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.R

Solid State Communicationsjournal1983en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor Quantum Structures and Devices Advanced Semiconductor Detectors and Materials Quantum and electron transport phenomena

Идентификаторы

DOI: 10.1016/0038-1098(83)90022-4

Цитирования и источники

Цитирований: 0Использованных источников: 4

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