S. I. Kokhanovskiǐ

Работ: 2

Ioffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.R

1. On the possibility of a flare-up of discrete exciton absorption structure in n-CdxHg1−xTe crystals in a magnetic field

   V. I. Ivanov-Omskiĭ, S. I. Kokhanovskiǐ, R. P. Seysyan +4

   СтатьяSemiconductor Quantum Structures and DevicesSolid State Communications1983Цитирований: 0

   ABIABI:AkademIndex/openalex/1983.article.000026

2. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

   А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000239