Работы, на которые ссылается эта работа

Работ: 5

Работа: On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

1. Electronic Processes in Non-Crystalline Materials

   N. F. Mott, E. A. Davis, A. Lösche

   Глава1972Цитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.277848

2. Без названия

   ДругоеЦитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.602825

3. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1983Цитирований: 2

   ABIABI:AkademIndex/openalex/1983.article.000065

4. Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam

   V. M. Rubinov, M. Tuychiev

   СтатьяChemical and Physical Properties of Materialsphysica status solidi (a)1982Цитирований: 1

   ABIABI:AkademIndex/openalex/1982.article.000071

5. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1983Цитирований: 1

   ABIABI:AkademIndex/openalex/1983.article.000076