Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy
G. É. CirlinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. N. PetrovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. A. MasalovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. O. GolubokA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
Multilayer structures of InGaAs/GaAs quantum dots fabricated by submonolayer migrationstimulated epitaxy have been studied experimentally by scanning tunneling microscopy and results are presented. These results clearly show that in multilayer structures, ordering of nanoobjects into rows occurs in InAs and InGaAs heteroepitaxial layers.
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