Работы, на которые ссылается эта работа

Работ: 5

Работа: Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions

1. Computer simulation of the sputtering of polyatomic multilayered materials with consideration of the spatial overlapping of the collision cascades

   Yu. V. Trushin, B.Ja. Ber, Vladimir S. Kharlamov +1

   Статья1996Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.608612

2. Molecular dynamics calculations of defect energetics in β-SiC

   Hanchen Huang, Nasr M. Ghoniem

   Статья1994Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.608614

3. Formation of Buried Layers of (SiC)_1-x(AINT)_x in 6H-SiC Using Ion-Beam Synthesis

   R.A. Yankov, N. Hatzopoulos, W. Fukarek +4

   Статья1996Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.608615

4. A model of the interaction of oxygen-subsystem defects with intercrystallite boundaries in polycrystalline YBa₂Cu₃O_{7- delta}films under gamma -irradiation

   D. V. Kulikov, R. A. Suris, Yu. V. Trushin

   Статья1995Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.654820

5. Без названия

   ДругоеЦитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.654821