Coulomb interaction controlled room temperature oscillation of tunnel current in porous Si
V. V. AfoninA. F. Ioffe Physicotechnical Institute, Solid State Physics Division, 194921, St. Petersburg, RussiaV. L. GurevichA. F. Ioffe Physicotechnical Institute, Solid State Physics Division, 194921, St. Petersburg, RussiaR. LaihoWihuri Physical Laboratory, University of Turku, FIN-20014, Turku, FinlandAlexander A. PavlovWihuri Physical Laboratory, University of Turku, FIN-20014, Turku, FinlandYulia PavlovaWihuri Physical Laboratory, University of Turku, FIN-20014, Turku, Finland
ABI
Аннотация
A novel phenomenon of regular oscillations is observed in I-V characteristics of porous silicon under illumination by visible light. The measurements are performed at room temperature using a scanning tunneling microscope. The heights of the oscillation peaks appear to be a linear function of the oscillation number. The experimental value of the Coulomb energy determined from the oscillation period is much smaller than k B T. The oscillations are attributed to a Coulomb effect, i.e., to the periodic trapping of a multielectron level in a quantum well within a Si nanocrystal under the combined influence of the voltage variation at the STM tip and the Coulomb interaction among the carriers.
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