Работы, цитирующие эту работу

Работ: 2

Работа: Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

1. Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   СтатьяSemiconductor materials and interfacesJournal of Physics Conference Series2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.009197

2. Strain-Resistive Properties of (Bi0.23Sb0.75)2Te3 Films at One-Sided Cyclic Alternating Strains

   Rustamjon U. Siddikov, Khusanboy Manopovich Sulaymonov, N. Kh. Yuldashev

   СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.003071