Статья

Physical-technological bases of reception sharp p–n-transition

A. V. KarimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. M. YodgorovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh.sh. YuldashevPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. Sh. BoltaevaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

DOAJ (DOAJ: Directory of Open Access Journals)repository2006uk

ABI

Аннотация

A method for obtaining an abrupt p–n junction by liquid-phase epitaxy is presented. It consists in the growth of a thin intermediate p-type layer on a heavily doped p+ substrate, followed by the growth of an n-type layer from a melt cooled at a decreasing rate.

Темы

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces Theoretical and Computational Physics

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