Optimization of carrier concentration distribution across epitaxial layer thickness
A. V. KarimovNGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. M. YodgorovaNGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanF. A. GiyasovaNGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanR. A. SaidovaNGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. A. HaydarovNGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
A piston-type device for liquid-phase epitaxy of AIIIBV semiconductor compounds has been modified. The possibility of controlling the impurity concentration gradient, which creates internal electric fields in the photodetecting and active regions of semiconductor structures, is demonstrated. This control is achieved by selecting the appropriate extrusion pattern of the solution–melt.
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