Features of the photo-electric characteristics of photoelectric converter of structures
A. V. KarimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. M. YodgorovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanF. A. GiyasovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanT. M. AzimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanU. M. BuzrukovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. A. YakubovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
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Аннотация
The peculiarities of photoelectric characteristics of converter structures based on the isotype n-GaAs/n-GaInAs heterojunction with Ag potential barriers have been investigated. The physical processes occurring in the potential barriers under optical irradiation are analyzed. The structures exhibit enhanced photosensitivity (2.2 A/W) at low light intensities. The photocurrent in the impurity absorption region covers a wide spectral range, extending up to 1.7 μm.
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