Работы, цитирующие эту работу

Работ: 2

Работа: Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

1. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

   P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

   СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2011Цитирований: 0

   ABIABI:AkademIndex/openalex/2011.article.000305

2. Effect of electron injection on charge properties of lead-boron-silicate glass

   О. О. Маматкаримов, N. Yu. Sharibaev, A. A. Abdulkhayev +1

   СтатьяSemiconductor materials and interfacesAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007475