Работы, цитирующие эту работу

Работ: 3

Работа: Some features of photocurrent generation in single- and multibarrier photodiode structures

1. Highly sensitive photodetector based on ge double-barrier punch-through structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

   СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2015Цитирований: 1

   ABIABI:AkademIndex/openalex/2015.article.000359

2. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

   A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

   ГлаваSemiconductor materials and interfacesInTech eBooks2011Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.510896

3. Electrical Properties and Photosensitivity of Multi-Barrier Photodiode Structure Based on Semi-Insulating GaAs

   O. A. Abdulkhaev, Anvar A’zamovich Yakubov, F. A. Giyasova +3

   СтатьяSemiconductor materials and interfaces2020 International Conference on Information Science and Communications Technologies (ICISCT)2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.001360