← Назад к работе
Работы, на которые ссылается эта работа
Работ: 54
Работа: Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory
Band alignment of rutile and anatase TiO2
David O. Scanlon, Charles W. Dunnill, John Buckeridge +12
Статья2013Цитирований: 5ABIResistive switching memory effect of ZrO2 films with Zr+ implanted
Qi Liu, Weihua Guan, Shibing Long +3
Статья2008Цитирований: 2ABIA Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
Myoung‐Jae Lee, Sunae Seo, D.‐C. Kim +11
Статья2006Цитирований: 2ABIHigh Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device
Wen-Yuan Chang, Hsin-Wei Huang, Wei‐Ting Wang +3
Статья2012Цитирований: 2ABIThe effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory
Cong Hu, Qi Wang, Shuai Bai +4
Статья2017Цитирований: 2ABIElectrical Defects in Silicon Introduced by Sputtering and Sputter‐Etching
Erik Grusell, S. Berg, L.P. Andersson
Статья1980Цитирований: 2ABI