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Работа: Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)
New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V
N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics2023Цитирований: 2ABI