Работы, цитирующие эту работу

Работ: 1

Работа: The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

1. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004230