Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)
Sultanov N.A.Doctor Of Physical And Mathematical Sciences, Professor, Department Of Physics, Fergana Polytechnic Institute, Fergana, UzbekistanR. T.Candidate Of Physical And Mathematical Sciences, Associate Professor, Department Of Physics, Fergana Polytechnic Institute, Fergana, UzbekistanZokirjon MirzajonovCandidate Of Physical And Mathematical Sciences, Associate Professor, Department Of Physics, Fergana Polytechnic Institute, Fergana, UzbekistanAxmadjonov M.F.Assistant, Department Of Physics, Fergana Polytechnic Institute, Fergana, Uzbekistan
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Аннотация
It was shown from capacitive measurements that the concentration of chromium levels decreases after irradiation of the samples with gamma quanta of the 60Co isotope, and the rate of formation of A centres in Si (Cr) is 8-10 times higher than in the control samples.
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