Работы, на которые ссылается эта работа

Работ: 23

Работа: Pseudogap, Nanocrystals and Electrical Conductivity of Doped Silicate Glass

Conduction Mechanism in RuO2-Based Thick Films
К. Flachbart, V. Pavl�k, N. Toma?ovi?ov� +4
Статья1998Цитирований: 8
ABI
High‐temperature anomalies in resistivity and thermoelectric power of thick‐film resistors and their conduction mechanism
G. Abdurakhmanov, N. G. Abdurakhmanova
СтатьяElectrical and Thermal Properties of Materialsphysica status solidi (a)2005Цитирований: 7
ABI
Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors
G. E. Pike, C. H. Seager
Статья1977Цитирований: 7
ABI
Ruthenium clusters in lead-borosilicate glass in thick film resistors
Kenji Adachi, Sadahiro lida, Kazuhide Hayashi
Статья1994Цитирований: 6
ABI
On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity
G. Abdurakhmanov
СтатьяElectrical and Thermal Properties of MaterialsWorld Journal of Condensed Matter Physics2014Цитирований: 5
ABI
Electrical conduction in thick film paste resistors
David Smith, J.C. Anderson
Статья1980Цитирований: 5
ABI
EVOLUTION OF CONDUCTION MECHANISM IN THICK FILM RESISTORS.
K.V.V. Murthy
Статья2019Цитирований: 5
ABI
Temperature characteristics of thick-film resistors and its application as a strain sensor with low temperature-sensitivity
Ming Wen, Xinchun Guan, Hui Li +1
Статья2019Цитирований: 5
ABI
On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)
G. Abdurakhmanov
СтатьяElectrical and Thermal Properties of MaterialsWorld Journal of Condensed Matter Physics2011Цитирований: 4
ABI
An explanation of thermal behaviour of thick film strain gauges
Yulan Zheng, John Atkinson, Russell Sion
Статья2003Цитирований: 4
ABI
Electron Self-Energy and Temperature-Dependent Effective Masses in Semiconductors:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Ge and Si
H. D. Vasileff
Статья1957Цитирований: 3
ABI
Effect of Glass Composition on the Electrical Properties of Thick‐Film Resistors
Kenji Adachi, Hiroko Kuno
Статья2000Цитирований: 3
ABI
Conduction mechanism in granular Ru02-based thick-film resistors
W. Schoepe
Статья1990Цитирований: 3
ABI
Phase transitions in Ru based thick-film (cermet) resistors
B. Morten, M. Prudenziati, M. Sacchi +1
Статья1988Цитирований: 3
ABI
Ohmic Contact Formation to PEDOT-PSS Films Using Graphite-Clay
S Bindu, M. Suresh
Статья2015Цитирований: 3
ABI
Amorphe und glasartige anorganische Festkörper
A. Feltz
Книга1983Цитирований: 3
ABI
Temperature Dependence of the Energy Gap in Monatomic Semiconductors
Heng Fan
Статья1950Цитирований: 2
ABI
Temperature dependence of semiconductor band gaps
K.P. O’Donnell, X. Chen
Статья1991Цитирований: 2
ABI
Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon
R. Pässler
Статья1996Цитирований: 2
ABI
Temperature Dependence of the Energy Gap in Semiconductors
Heng Fan
Статья1951Цитирований: 2
ABI
Без названия
ДругоеЦитирований: 1
ABI
Без названия
ДругоеЦитирований: 1
ABI
Без названия
ДругоеЦитирований: 1
ABI