Работы, на которые ссылается эта работа

Работ: 7

Работа: Some electrophysical properties of polycrystalline silicon obtained in a solar oven

1. Electrophysical properties of solar polycrystalline silicon and its n +-p structures at elevated temperatures

   B. M. Abdurakhmanov, L. O. Olimov, М. С. Саидов

   СтатьяThin-Film Transistor TechnologiesApplied Solar Energy2008Цитирований: 10

   ABIABI:AkademIndex/openalex/2026.other.329306

2. Model of the grain boundary in p-n structures based on polycrystalline semiconductors

   L. O. Olimov

   Статья2010Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.285231

3. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

   L. O. Olimov

   СтатьяThin-Film Transistor TechnologiesSemiconductors2010Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.285234

4. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

   L. O. Olimov

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2012Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.285233

5. Polycrystalline semiconductors; physical properties and applications

   HKH

   Статья1986Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.498449

6. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

   М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

   СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2007Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.502803

7. Structural transformations and silicon nanocrystallite formation in SiOx films

   V.Ya. Bratus, V. A. Yukhimchuk, L. I. Berezhinsky +6

   Статья2001Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.380235