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Работы, на которые ссылается эта работа

Работ: 637

Работа: Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

  1. Electric Field Effect in Atomically Thin Carbon Films

    Kostya S. Novoselov, A. K. Geǐm, С. В. Морозов +5

    Статья2004Цитирований: 66
    ABI

  2. 2D metal carbides and nitrides (MXenes) for energy storage

    Babak Anasori, Maria R. Lukatskaya, Yury Gogotsi

    Обзорная статья2017Цитирований: 16
    ABI

  3. The missing memristor found

    Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart +1

    Статья2008Цитирований: 11
    ABI

  4. Deep learning in neural networks: An overview

    Jürgen Schmidhuber

    Обзорная статья2014Цитирований: 8
    ABI

  5. Memristor-The missing circuit element

    Leon O. Chua

    Статья1971Цитирований: 8
    ABI

  6. Beyond the hype: Big data concepts, methods, and analytics

    Amir Gandomi, Murtaza Haider

    Статья2014Цитирований: 8
    ABI

  7. Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

    Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13

    СтатьяAdvanced Memory and Neural ComputingNanoscale2022Цитирований: 8
    ABI

  8. Memristive switching mechanism for metal/oxide/metal nanodevices

    J. Joshua Yang, Matthew D. Pickett, Xuema Li +3

    Статья2008Цитирований: 6
    ABI

  9. Memristive devices for computing

    J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart

    Статья2012Цитирований: 6
    ABI

  10. The perceptron: A probabilistic model for information storage and organization in the brain.

    Frank F. Rosenblatt

    Статья1958Цитирований: 6
    ABI

  11. Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

    Sattam Al Otaibi, Nasir Ilyas, Mohammed Zubair M. Shamim +6

    Статья2021Цитирований: 6
    ABI

  12. Metal–Oxide RRAM

    H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu +6

    Статья2012Цитирований: 4
    ABI

  13. The emergence of spin electronics in data storage

    Claude Chappert, A. Fert, F. Nguyen Van Dau

    Статья2007Цитирований: 4
    ABI

  14. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

    Rainer Waser, Regina Dittmann, G. Staikov +1

    Обзорная статья2009Цитирований: 4
    ABI

  15. Robust Ag/ZrO<sub>2</sub>/WS<sub>2</sub>/Pt Memristor for Neuromorphic Computing

    Xiaobing Yan, Cuiya Qin, Chao Lü +14

    Статья2019Цитирований: 4
    ABI

  16. Fundamentals of Photonics

    Bahaa E. A. Saleh, Malvin C. Teich

    Книга1991Цитирований: 4
    ABI

  17. Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films

    Jin Cheol Park, Seok Joon Yun, Hyun Kim +7

    Статья2015Цитирований: 3
    ABI

  18. Synaptic plasticity: taming the beast

    L. F. Abbott, Sacha B. Nelson

    Обзорная статья2000Цитирований: 3
    ABI

  19. The Basis of the Electron Theory of Metals, with Special Reference to the Transition Metals

    N. F. Mott

    Статья1949Цитирований: 3
    ABI

  20. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

    Zheng Wen, Chen Li, Di Wu +2

    Другое2013Цитирований: 3
    ABI

  21. Two-dimensional material nanophotonics

    Fengnian Xia, Han Wang, Di Xiao +2

    Статья2014Цитирований: 3
    ABI

  22. VII. On the electro-chemical polarity of gases

    W.R. Grove

    Статья1852Цитирований: 3
    ABI

  23. Role of Oxygen Vacancies in Cr‐Doped SrTiO<sub>3</sub> for Resistance‐Change Memory

    M. Janousch, G. I. Meijer, U. Staub +3

    Статья2007Цитирований: 3
    ABI

  24. Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

    Wuhong Xue, Wei Xiao, Jie Shang +10

    Статья2014Цитирований: 3
    ABI

  25. Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications

    Qunhong Weng, Xuebin Wang, Xuebin Wang +3

    Обзорная статья2016Цитирований: 3
    ABI