Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы
← Назад к работе

Работы, на которые ссылается эта работа

Работ: 637

Работа: Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

  1. Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices

    Aize Hao, Shuai He, Ni Qin +2

    Статья2017Цитирований: 3
    ABI

  2. Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

    Qi Liu, Jun Sun, Hangbing Lv +6

    Статья2012Цитирований: 3
    ABI

  3. In-memory computing with resistive switching devices

    Daniele Ielmini, H.‐S. Philip Wong

    Статья2018Цитирований: 3
    ABI

  4. A MoS<sub>2</sub>/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang, Chunsheng Chen, Zhihao Yu +8

    Статья2018Цитирований: 3
    ABI

  5. Nonvolatile Memories Based on Graphene and Related 2D Materials

    Simone Bertolazzi, Paolo Bondavalli, Stephan Roche +5

    Обзорная статья2019Цитирований: 3
    ABI

  6. Recent Progress in Artificial Synapses Based on Two-Dimensional van der Waals Materials for Brain-Inspired Computing

    Seunghwan Seo, Je‐Jun Lee, Hojun Lee +5

    Статья2020Цитирований: 3
    ABI

  7. A synaptic memristor based on two-dimensional layered WSe<sub>2</sub> nanosheets with short- and long-term plasticity

    Songwen Luo, Kanghong Liao, Peixian Lei +8

    Статья2021Цитирований: 3
    ABI

  8. Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

    Nasir Ilyas, Jinyong Wang, Chunmei Li +7

    Статья2021Цитирований: 3
    ABI

  9. Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

    Saima Batool, Muhammad Idrees, Shirui Zhang +2

    Обзорная статья2022Цитирований: 3
    ABI

  10. Competitive Hebbian learning through spike-timing-dependent synaptic plasticity

    Sen Song, Kenneth D. Miller, L. F. Abbott

    Статья2000Цитирований: 2
    ABI

  11. Resistive switching memory effect of ZrO2 films with Zr+ implanted

    Qi Liu, Weihua Guan, Shibing Long +3

    Статья2008Цитирований: 2
    ABI

  12. Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

    Simone Balatti, Stefano Ambrogio, Daniele Ielmini

    Статья2015Цитирований: 2
    ABI

  13. Field-induced resistive switching in metal-oxide interfaces

    S. Tsui, A. Baikalov, J. Cmaidalka +6

    Статья2004Цитирований: 2
    ABI

  14. Ultrafast Synaptic Events in a Chalcogenide Memristor

    Yi Li, Yingpeng Zhong, Lei Xu +4

    Статья2013Цитирований: 2
    ABI

  15. Experimental study for selection of electrode material for ZnO‐based memristors

    Ashish Kumar, Maryam Shojaei Baghini

    Статья2014Цитирований: 2
    ABI

  16. Dielectric breakdown I: A review of oxide breakdown

    J.F. Verweij, J.H. Klootwijk

    Обзорная статья1996Цитирований: 2
    ABI

  17. A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

    Myoung‐Jae Lee, Sunae Seo, D.‐C. Kim +11

    Статья2006Цитирований: 2
    ABI

  18. Nonvolatile Memory with Multilevel Switching: A Basic Model

    M. J. Rozenberg, Isao Inoue, M. J. Sánchez

    Статья2004Цитирований: 2
    ABI

  19. High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

    Wen-Yuan Chang, Hsin-Wei Huang, Wei‐Ting Wang +3

    Статья2012Цитирований: 2
    ABI

  20. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

    Chan‐Ho Yang, Jan Seidel, Steven Kim +14

    Статья2009Цитирований: 2
    ABI

  21. Low-Frequency Negative Resistance in Thin Anodic Oxide Films

    T. W. Hickmott

    Статья1962Цитирований: 2
    ABI

  22. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

    Julien Borghetti, Gregory S. Snider, Philip J. Kuekes +3

    Статья2010Цитирований: 2
    ABI

  23. In situ imaging of the conducting filament in a silicon oxide resistive switch

    Jun Yao, Lin Zhong, Douglas Natelson +1

    Статья2012Цитирований: 2
    ABI

  24. Phase-change materials for rewriteable data storage

    Matthias Wuttig, Noboru Yamada

    Статья2007Цитирований: 2
    ABI

  25. Memristive behavior of ZnO/NiO stacked heterostructure

    Rui Zhang, Sh. U. Yuldashev, Jung‐Kyu Lee +3

    Статья2013Цитирований: 2
    ABI