Работы, на которые ссылается эта работа
Работ: 637
Работа: Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications
Artificial synapse network on inorganic proton conductor for neuromorphic systems
Li Qiang Zhu, Chang Wan, Li Guo +2
Статья2014Цитирований: 2ABIPhotonic non-volatile memories using phase change materials
Wolfram H. P. Pernice, Harish Bhaskaran
Статья2012Цитирований: 2ABISwitching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Krzysztof Szot, W. Speier, Gustav Bihlmayer +1
Статья2006Цитирований: 2ABIBipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
Nuo Xu, L.F. Liu, Xianwen Sun +7
Статья2008Цитирований: 2ABIAtomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok‐Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang +9
Статья2010Цитирований: 2ABIAmorphous Metal‐Sulphide Microfibers Enable Photonic Synapses for Brain‐Like Computing
Behrad Gholipour, P. Bastock, C. Samuel Craig +3
Статья2015Цитирований: 2ABISequence to Sequence Learning with Neural Networks
Ilya Sutskever, Oriol Vinyals, Quoc V. Le
Препринт2014Цитирований: 2ABIResistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications
Sungho Kim, Hanul Moon, Dipti Gupta +2
Статья2009Цитирований: 2ABINonvolatile resistive switching memories-characteristics, mechanisms and challenges
Feng Pan, Chao Chen, Zhishun Wang +3
Статья2010Цитирований: 2ABIOverview of the SpiNNaker System Architecture
Steve Furber, David Lester, Luis A. Plana +4
Статья2012Цитирований: 2ABIThe mechanism of electroforming of metal oxide memristive switches
J. Joshua Yang, Feng Miao, Matthew D. Pickett +4
Статья2009Цитирований: 2ABIBipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
Christina Schindler, Sarath Chandran Puthen Thermadam, Rainer Waser +1
Статья2007Цитирований: 2ABIHybrid graphene–quantum dot phototransistors with ultrahigh gain
Gerasimos Konstantatos, Michela Badioli, Louis Gaudreau +5
Статья2012Цитирований: 2ABINanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
Duygu Kuzum, Rakesh Jeyasingh, Byoungil Lee +1
Статья2011Цитирований: 2ABICharge transfer at carbon nanotube–graphene van der Waals heterojunctions
Yuanda Liu, Fengqiu Wang, Yujie Liu +3
Статья2016Цитирований: 2ABISolution‐Processed Two‐Dimensional MoS<sub>2</sub> Nanosheets: Preparation, Hybridization, and Applications
Xiao Zhang, Zhuangchai Lai, Chaoliang Tan +1
Обзорная статья2016Цитирований: 2ABICoexistence of analog and digital resistive switching in BiFeO3-based memristive devices
Статья2016Цитирований: 2ABINonvolatile All‐Optical 1 × 2 Switch for Chipscale Photonic Networks
Matthias Stegmaier, Carlos Rı́os, Harish Bhaskaran +2
Статья2016Цитирований: 2ABIThe effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory
Cong Hu, Qi Wang, Shuai Bai +4
Статья2017Цитирований: 2ABI