Работы, на которые ссылается эта работа
Работ: 373
Работа: Recent innovations in 2D magnetic materials and their potential applications in the modern era
Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals
Cheng Gong, Lin Li, Zhenglu Li +12
Статья2017Цитирований: 3ABICurrent-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Aurélien Manchon, Jakub Železný, Ioan Mihai Miron +5
Статья2019Цитирований: 3ABIMagnetic 2D materials and heterostructures
M. Gibertini, M. Koperski, Alberto F. Morpurgo +1
Статья2019Цитирований: 3ABIGraphene and two-dimensional materials for silicon technology
Deji Akinwande, Cedric Huyghebaert, Ching-Hua Wang +5
Обзорная статья2019Цитирований: 3ABIMemristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics
Woong Huh, Donghun Lee, Chul‐Ho Lee
Обзорная статья2020Цитирований: 3ABIHigh-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kibum Kang, Saien Xie, Lujie Huang +6
Статья2015Цитирований: 2ABILarge, non-saturating magnetoresistance in WTe2
Mazhar N. Ali, Jun Xiong, Steven Flynn +8
Статья2014Цитирований: 2ABIMott Relation for Anomalous Hall and Nernst Effects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>As</mml:mi></mml:math>Ferromagnetic Semiconductors
Yong Pu, Daichi Chiba, F. Matsukura +2
Статья2008Цитирований: 2ABISpin-Torque Switching with the Giant Spin Hall Effect of Tantalum
Luqiao Liu, Chi‐Feng Pai, Yi Li +3
Статья2012Цитирований: 2ABIControl of magnetism by electric fields
F. Matsukura, Yoshinori Tokura, Hideo Ohno
Обзорная статья2015Цитирований: 2ABILiquid Exfoliation of Layered Materials
Valeria Nicolosi, Manish Chhowalla, Mercouri G. Kanatzidis +2
Статья2013Цитирований: 2ABIElectric Manipulation of Spin Relaxation Using the Spin Hall Effect
Kazuya Ando, S. Takahashi, K. Harii +4
Статья2008Цитирований: 2ABIResonant tunnelling and negative differential conductance in graphene transistors
L. Britnell, Roman Gorbachev, A. K. Geǐm +6
Статья2013Цитирований: 2ABIInterface-induced phenomena in magnetism
F. Hellman, Axel Hoffmann, Yaroslav Tserkovnyak +24
Статья2017Цитирований: 2ABICrystal and Magnetic Structures in Layered, Transition Metal Dihalides and Trihalides
Статья2017Цитирований: 2ABIMetallic Vanadium Disulfide Nanosheets as a Platform Material for Multifunctional Electrode Applications
Qingqing Ji, Cong Li, Jingli Wang +11
Статья2017Цитирований: 2ABIGiant tunneling magnetoresistance in spin-filter van der Waals heterostructures
Tiancheng Song, Xinghan Cai, Matisse Wei-Yuan Tu +12
Статья2018Цитирований: 2ABIVery large tunneling magnetoresistance in layered magnetic semiconductor CrI3
Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig +7
Статья2018Цитирований: 2ABIElectrical control of 2D magnetism in bilayer CrI3
Bevin Huang, Genevieve Clark, Dahlia Klein +10
Статья2018Цитирований: 2ABIControlling magnetism in 2D CrI3 by electrostatic doping
Shengwei Jiang, Lizhong Li, Zefang Wang +2
Статья2018Цитирований: 2ABITwo-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2
Zaiyao Fei, Bevin Huang, Paul Malinowski +11
Статья2018Цитирований: 2ABIRoom-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films
Mahendra DC, Roberto Grassi, Junyang Chen +12
Статья2018Цитирований: 2ABIRecent Advances in Growth of Novel 2D Materials: Beyond Graphene and Transition Metal Dichalcogenides
Обзорная статья2018Цитирований: 2ABI