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Работы, на которые ссылается эта работа
Работ: 90
Работа: Investigation of n-ZnO/p-Si and n-TiO<sub>2</sub>/p-Si Heterojunction Solar Cells: TCAD + DFT
A comprehensive review of ZnO materials and devices
Ümit Özgür, Ya. I. Alivov, C. Liu +6
Обзорная статья2005Цитирований: 35ABINecessary and sufficient elastic stability conditions in various crystal systems
Félix Mouhat, François‐Xavier Coudert
Статья2014Цитирований: 16ABIRestoring the Density-Gradient Expansion for Exchange in Solids and Surfaces
John P. Perdew, Adrienn Ruzsinszky, Gábor I. Csonka +5
Статья2008Цитирований: 7ABIEnhancing solar cell efficiency: the search for luminescent materials as spectral converters
Xiaoyong Huang, Sanyang Han, Wei Huang +1
Обзорная статья2012Цитирований: 4ABIA study of the influence of the base thickness on photoelectric parameters of silicon solar cells with the new TCAD algorithms
M. Abduvohidov, Р. Алиев, Jasurbek Gulomov
СтатьяSilicon and Solar Cell TechnologiesScientific and technical journal of information technologies mechanics and optics2021Цитирований: 4ABIFirst-principles prediction of charge mobility in carbon and organic nanomaterials
Jinyang Xi, Mengqiu Long, Ling Tang +2
Статья2012Цитирований: 3ABIZnO: growth, doping & processing
D. P. Norton, Young-Woo Heo, M. Ivill +4
Статья2004Цитирований: 3ABISiO2 surface passivation layers – a key technology for silicon solar cells
Stefan W. Glunz, Frank Feldmann
Статья2018Цитирований: 3ABIImproving spectral modification for applications in solar cells: A review
Joseph Day, S. Senthilarasu, Tapas K. Mallick
Обзорная статья2018Цитирований: 3ABIGold nanostructures: engineering their plasmonic properties for biomedical applications
Min Hu, Jingyi Chen, Zhi‐Yuan Li +5
Обзорная статья2006Цитирований: 2ABISteady-State Simulation of Semiconductor Devices Using Discontinuous Galerkin Methods
Статья2020Цитирований: 2ABI