Работы, цитирующие эту работу

Работ: 1

Работа: Development of technology for creating high-voltage p0–n0 junctions based on GaAs

1. Radiation dynamics of GaAs-AlGaAs superluminescent leds: Study and features

   Ahmadjon Sultonov, B. I. Uktamaliyev

   СтатьяSemiconductor Quantum Structures and DevicesAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007416