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Работы, на которые ссылается эта работа

Работ: 154

Работа: Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices

  1. Deep learning

    Yann LeCun, Yoshua Bengio, Geoffrey E. Hinton

    Обзорная статья2015Цитирований: 36
    ABI

  2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

    Manish Chhowalla, Hyeon Suk Shin, Goki Eda +3

    Статья2013Цитирований: 6
    ABI

  3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon +2

    Статья2014Цитирований: 5
    ABI

  4. Robust Ag/ZrO<sub>2</sub>/WS<sub>2</sub>/Pt Memristor for Neuromorphic Computing

    Xiaobing Yan, Cuiya Qin, Chao Lü +14

    Статья2019Цитирований: 4
    ABI

  5. Без названия

    ДругоеЦитирований: 4
    ABI

  6. Wireless Multiferroic Memristor with Coupled Giant Impedance and Artificial Synapse Application

    Yao Wang, Rui Xiao, Ning Xiao +4

    Статья2022Цитирований: 4
    ABI

  7. A synaptic memristor based on two-dimensional layered WSe<sub>2</sub> nanosheets with short- and long-term plasticity

    Songwen Luo, Kanghong Liao, Peixian Lei +8

    Статья2021Цитирований: 3
    ABI

  8. Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

    Nasir Ilyas, Jinyong Wang, Chunmei Li +7

    Статья2021Цитирований: 3
    ABI

  9. Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

    Saima Batool, Muhammad Idrees, Shirui Zhang +2

    Обзорная статья2022Цитирований: 3
    ABI

  10. Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

    Woong Huh, Donghun Lee, Chul‐Ho Lee

    Обзорная статья2020Цитирований: 3
    ABI

  11. Recent Advances in Two-Dimensional Materials beyond Graphene

    Ganesh R. Bhimanapati, Zhong Lin, Vincent Meunier +24

    Статья2015Цитирований: 3
    ABI

  12. A light-stimulated synaptic device based on graphene hybrid phototransistor

    Shuchao Qin, Fengqiu Wang, Yujie Liu +6

    Статья2017Цитирований: 3
    ABI

  13. Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus

    Taimur Ahmed, Sruthi Kuriakose, Edwin Mayes +5

    Статья2019Цитирований: 3
    ABI

  14. Two-dimensional materials for next-generation computing technologies

    Chunsen Liu, Huawei Chen, Shuiyuan Wang +5

    Обзорная статья2020Цитирований: 3
    ABI

  15. Без названия

    ДругоеЦитирований: 3
    ABI

  16. Stimuli‐Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing

    Hongyu Bian, Yi Yiing Goh, Yuxia Liu +3

    Обзорная статья2021Цитирований: 3
    ABI

  17. Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS<sub>2</sub> with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

    Bin‐Wei Yao, Jiaqiang Li, Xu‐Dong Chen +5

    Статья2021Цитирований: 3
    ABI

  18. Two-dimensional materials memory devices with floating metal gate for neuromorphic applications

    Muhammad Asghar Khan, Sungbin Yim, Shania Rehman +5

    Статья2023Цитирований: 3
    ABI

  19. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

    Fengnian Xia, Han Wang, Yichen Jia

    Статья2014Цитирований: 2
    ABI

  20. 2D Material Based Synaptic Devices for Neuromorphic Computing

    Guiming Cao, Peng Meng, Jiangang Chen +5

    Статья2020Цитирований: 2
    ABI

  21. Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

    Tae‐Jun Ko, Hao Li, Sohrab Alex Mofid +12

    Обзорная статья2020Цитирований: 2
    ABI

  22. 2D MoS<sub>2</sub>-Based Threshold Switching Memristor for Artificial Neuron

    Durjoy Dev, Adithi Krishnaprasad, Mashiyat Sumaiya Shawkat +6

    Статья2020Цитирований: 2
    ABI

  23. Artificial Nociceptor Using 2D MoS<sub>2</sub> Threshold Switching Memristor

    Durjoy Dev, Mashiyat Sumaiya Shawkat, Adithi Krishnaprasad +2

    Статья2020Цитирований: 2
    ABI

  24. Power-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions

    Yingli Chu, Haotian Tan, Chenyang Zhao +2

    Статья2022Цитирований: 2
    ABI

  25. Optical properties of black phosphorus

    Xiaomu Wang, Shoufeng Lan

    Статья2016Цитирований: 2
    ABI