Работы, на которые ссылается эта работа

Работ: 71

Работа: Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

A comprehensive review of ZnO materials and devices
Ümit Özgür, Ya. I. Alivov, C. Liu +6
Обзорная статья2005Цитирований: 35
ABI
The missing memristor found
Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart +1
Статья2008Цитирований: 11
ABI
Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications
Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13
СтатьяAdvanced Memory and Neural ComputingNanoscale2022Цитирований: 8
ABI
Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications
Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2
СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6
ABI
Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing
Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4
СтатьяAdvanced Memory and Neural ComputingRSC Advances2023Цитирований: 6
ABI
Memristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang, Matthew D. Pickett, Xuema Li +3
Статья2008Цитирований: 6
ABI
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
Ruijing Ge, Xiaohan Wu, Myungsoo Kim +6
Статья2017Цитирований: 5
ABI
The emergence of spin electronics in data storage
Claude Chappert, A. Fert, F. Nguyen Van Dau
Статья2007Цитирований: 4
ABI
Role of Oxygen Vacancies in Cr‐Doped SrTiO<sub>3</sub> for Resistance‐Change Memory
M. Janousch, G. I. Meijer, U. Staub +3
Статья2007Цитирований: 3
ABI
Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films
Wuhong Xue, Wei Xiao, Jie Shang +10
Статья2014Цитирований: 3
ABI
Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices
Aize Hao, Shuai He, Ni Qin +2
Статья2017Цитирований: 3
ABI
Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM
Qi Liu, Jun Sun, Hangbing Lv +6
Статья2012Цитирований: 3
ABI
Vertically Aligned ZnO Nanorod Arrays Sentisized with Gold Nanoparticles for Schottky Barrier Photovoltaic Cells
Zhenhua Chen, Yongbing Tang, Chao Ping Liu +9
Статья2009Цитирований: 3
ABI
A review of emerging non-volatile memory (NVM) technologies and applications
An Chen
Обзорная статья2016Цитирований: 3
ABI
Memristor with Ag‐Cluster‐Doped TiO<sub>2</sub> Films as Artificial Synapse for Neuroinspired Computing
Xiaobing Yan, Jianhui Zhao, Sen Liu +4
Статья2017Цитирований: 3
ABI
Experimental study for selection of electrode material for ZnO‐based memristors
Ashish Kumar, Maryam Shojaei Baghini
Статья2014Цитирований: 2
ABI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti, Gregory S. Snider, Philip J. Kuekes +3
Статья2010Цитирований: 2
ABI
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
Nuo Xu, L.F. Liu, Xianwen Sun +7
Статья2008Цитирований: 2
ABI
Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation
Chung-Nan Peng, Chun-Wen Wang, Tsung-Cheng Chan +6
Статья2012Цитирований: 2
ABI
Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications
Sungho Kim, Hanul Moon, Dipti Gupta +2
Статья2009Цитирований: 2
ABI
A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications
Tuo Shi, Rui Wang, Zuheng Wu +3
Обзорная статья2021Цитирований: 2
ABI
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim, Razali Ismail
Статья2015Цитирований: 2
ABI
ZnO Schottky barriers and Ohmic contacts
L. J. Brillson, Yicheng Lu
Статья2011Цитирований: 2
ABI
Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band‐Bending
Youfan Hu, Yang Liu, Wenliang Li +4
Статья2009Цитирований: 2
ABI
Effects of crystallization and dopant concentration on the emission behavior of TiO2:Eu nanophosphors
Mou Pal, Umapada Pal, Justo Miguel Gracia y Jiménez +1
Статья2012Цитирований: 2
ABI