Работы, на которые ссылается эта работа

Работ: 71

Работа: Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

1. Flexible artificial nociceptor using a biopolymer-based forming-free memristor

   Jun Ge, Shan Zhang, Zhiyu Liu +2

   Статья2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.057064

2. Ultrathin TiO<i>_x</i> Interface‐Mediated ZnO‐Nanowire Memristive Devices Emulating Synaptic Behaviors

   Ming Xiao, Travis Yeow, Việt Hương Nguyễn +4

   Статья2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.057069

3. Threshold Switching in Single Metal‐Oxide Nanobelt Devices Emulating an Artificial Nociceptor

   Ming Xiao, Daozhi Shen, Moritz H. Futscher +4

   Статья2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.057071

4. Nociceptive Memristor

   Yumin Kim, Young Jae Kwon, Dae Eun Kwon +8

   Статья2018Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.057075

5. Bipolar resistive switching behaviors in Cr-doped ZnO films

   Ding Lin Xu, Ying Xiong, Ming Hua Tang +6

   Статья2013Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.106072

6. Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

   Yang-Shun Fan, Po‐Tsun Liu, Ching-Hui Hsu

   Статья2013Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.106074

7. Surface Engineering of ZnO Nanostructures for Semiconductor‐Sensitized Solar Cells

   Jun Xu, Zhenhua Chen, Juan Antonio Zapien +2

   Статья2014Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.106076

8. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

   Feng Miao, John Paul Strachan, J. Joshua Yang +7

   Статья2011Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.106079

9. A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO₂/Pt structure

   Kyung Min Kim, Byung Joon Choi, Min Hwan Lee +6

   Статья2011Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.106081

10. Runx1 Determines Nociceptive Sensory Neuron Phenotype and Is Required for Thermal and Neuropathic Pain

    Chih-Li Chen, Daniel C. Broom, Yang Liu +7

    Статья2006Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106084

11. Future Directions and Challenges for ETox Flash Memory Scaling

    G. Atwood

    Статья2004Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106086

12. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    Yi-Jen Huang, Shih-Chun Chao, Der‐Hsien Lien +3

    Статья2016Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106089

13. Ultra-Low Switching Voltage Induced by Inserting SiO₂Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

    Chih‐Cheng Shih, Wen‐Jen Chen, Kuan‐Chang Chang +12

    Статья2016Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106091

14. A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

    Mohammed Zackriya, Harish M. Kittur, Albert Chin

    Статья2017Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106093

15. Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3

    A. S. Goossens, A. Das, T. Banerjee

    Статья2018Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106101

16. Enhanced magnetic modulation in HfO2-based resistive memory with an Hf top electrode

    Jiajun Guo, Xin Kang, Yingjie Gao +2

    Статья2018Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106102

17. A multi-level memristor based on atomic layer deposition of iron oxide

    Samuele Porro, Katarzyna Bejtka, Alladin Jasmin +5

    Статья2018Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106104

18. Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

    Jingon Jang, Han‐Hyeong Choi, Sung Hoon Paik +3

    Статья2018Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106105

19. Effects of Pyrazine Derivatives and Substituted Positions on the Photoelectric Properties and Electromemory Performance of D–A–D Series Compounds

    Xuejing Song, Lingqian Kong, Hongmei Du +4

    Статья2018Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106106

20. Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices

    Shilpa S. More, Pratiksha A. Patil, Kalyani D. Kadam +9

    Статья2019Цитирований: 2

    ABIABI:AkademIndex/openalex/2026.other.106108

21. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.106069

22. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.106070

23. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.106073

24. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.106075

25. Без названия

    ДругоеЦитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.106077