Работы, на которые ссылается эта работа

Работ: 10

Работа: Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge
Статья2011Цитирований: 11
ABI
Short-channel effects in SOI MOSFETs
S. Veeraraghavan, J.G. Fossum
Статья1989Цитирований: 7
ABI
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
ABI
Optimization of vertically stacked nanosheet FET immune to self-heating
M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1
СтатьяSemiconductor materials and devicesMicro and Nanostructures2023Цитирований: 5
ABI
Physical origin of negative differential resistance in SOI transistors
Liam McDaid, Steven Hall, Phil Mellor +2
Статья1989Цитирований: 5
ABI
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3
Статья2018Цитирований: 4
ABI
Self-Consistent Simulation of Heating Effects in Nanoscale Devices
Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva
Статья2009Цитирований: 3
ABI
Performance estimation of junctionless multigate transistors
Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian +4
Статья2009Цитирований: 3
ABI
SOI versus bulk-silicon nanoscale FinFETs
J.G. Fossum, Zhenming Zhou, L. Mathew +1
Статья2009Цитирований: 2
ABI
Без названия
ДругоеЦитирований: 1
ABI