Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field
Аннотация
Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Р circ. of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H . Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g 1 , g 2 and the conduction band electron g e . In the case of a strong magnetic field H // [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Р circ. was performed for some critical values of g 2 / g 1 , at which Р circ. exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.