Работы, цитирующие эту работу

Работ: 4

Работа: The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

1. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002520

2. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

   M. Yu. Tashmetov, Khabibulla Djangabaev

   СтатьяSemiconductor Quantum Structures and DevicesPhysica Scripta2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002581

3. Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon

   M.Yu. Tashmetov, Sh. Makhkamov, Sohibjon Egamov +2

   СтатьяSilicon and Solar Cell TechnologiesPhysica B Condensed Matter2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006431

4. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

   M Yu Tashmetov, Abror Abdaminov

   СтатьяRadiation Effects in ElectronicsPhysica Scripta2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.017583