Работы, цитирующие эту работу

Работ: 2

Работа: Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

1. Fabrication of Si/CdTe Heterostructure via Vacuum Thermal Evaporation: Synthesis and Properties Characterization

   I. B. Sapaev, S. Sadullaev, U. Kh. Rakhmonov

   СтатьяChalcogenide Semiconductor Thin FilmsEngineering Technology & Applied Science Research2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002600

2. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006836