Статья

Fabrication of Si/CdTe Heterostructure via Vacuum Thermal Evaporation: Synthesis and Properties Characterization

I. B. SapaevPhysics and Chemistry Department, Tashkent Institute of Irrigation and Agricultural Mechanization Engineers, National Research University, Tashkent, Uzbekistan | University of Tashkent for Applied Sciences, Str. Gavhar 1, Tashkent 100149, Uzbekistan | School of Engineering, Central Asian University, Tashkent 111221, Uzbekistan | Western Caspian University, Baku, Azerbaijan | Baku Eurasian University, Baku, AZ 1073, AzerbaijanS. SadullaevFundamental and Applied Research Institute, Tashkent Institute of Irrigation and Agricultural Mechanization Engineers, National Research University, UzbekistanU. Kh. RakhmonovS.A. Azimov Physical-Technical Institute of Uzbekistan Academy of Sciences, Uzbekistan

Engineering Technology & Applied Science Researchjournal2025

ABI

Аннотация

This study focuses on the investigation of a heterostructure fabricated using the Vacuum Thermal Evaporation (VTE) technique and presents the X-ray structural analysis of the compound obtained using the VTE method. The study also determines the optimum pressure and temperature for the production of silicon cadmium tellurium compound. The analysis showed that the Silicon–Cadmium Telluride (nSi–pCdTe) heterojunction, formed on a silicon substrate, consists of a CdTe epitaxial layer with an estimated thickness of approximately 10 μm, followed by a 2–3 μm interfacial transition region at the CdTe/Si interface. The heterostructure of nSi-pCdTe current-voltage (I–V) characteristics, capacitance-voltage (C–V), and spectral features were the main subjects of the investigation.

Темы

Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces Advanced Semiconductor Detectors and Materials

Идентификаторы

DOI: 10.48084/etasr.12869

Цитирования и источники

Цитирований: 1 Использованных источников: 36

Показатели — AkademScholar · Скоро