← Назад к работе
Работы, на которые ссылается эта работа
Работ: 257
Работа: 2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications
Recommended Methods to Study Resistive Switching Devices
Mario Lanza, H.‐S. Philip Wong, Eric Pop +51
Статья2018Цитирований: 2ABIMemristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang, Saumil Joshi, Sergey Savel’ev +14
Статья2016Цитирований: 2ABIIonic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing
Xiaojian Zhu, Da Li, Xiaogan Liang +1
Статья2018Цитирований: 2ABIMemristive devices based on emerging two-dimensional materials beyond graphene
Lei Zhang, Tian Gong, Huide Wang +2
Статья2019Цитирований: 2ABISelf-selective van der Waals heterostructures for large scale memory array
Linfeng Sun, Yishu Zhang, Gyeongtak Han +10
Статья2019Цитирований: 2ABIElectronic and Photoelectronic Memristors Based on 2D Materials
Kai Tang, Yang Wang, Chuanhui Gong +4
Статья2022Цитирований: 2ABI2022 roadmap on neuromorphic devices and applications research in China
Qing Wan, Changjin Wan, Huaqiang Wu +41
Статья2022Цитирований: 2ABIEmerging Memristive Artificial Synapses and Neurons for Energy‐Efficient Neuromorphic Computing
Sanghyeon Choi, Jehyeon Yang, Gunuk Wang
Обзорная статья2020Цитирований: 2ABIThe Future of Memristors: Materials Engineering and Neural Networks
Kaixuan Sun, Jingsheng Chen, Xiaobing Yan
Статья2020Цитирований: 2ABIField-Effect Transistors Based on Few-Layered α-MoTe<sub>2</sub>
Nihar Pradhan, Daniel Rhodes, Simin Feng +6
Статья2014Цитирований: 2ABIAmbipolar MoTe<sub>2</sub> Transistors and Their Applications in Logic Circuits
Yen‐Fu Lin, Yong Xu, Sheng‐Tsung Wang +9
Статья2014Цитирований: 2ABIEnhancing photoresponsivity using MoTe2-graphene vertical heterostructures
Manabendra Kuiri, Biswanath Chakraborty, Arup Kumar Paul +3
Статья2016Цитирований: 2ABIOptical and Electronic Properties of Two‐Dimensional Layered Materials
Marco Bernardi, Can Ataca, Maurizia Palummo +1
Статья2016Цитирований: 2ABI