Работы, цитирующие эту работу

Работ: 2

1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

   I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

   СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22

   ABIABI:AkademIndex/openalex/2022.article.000132

2. Experimental and theoretical study of the effect of bombardment with Ar⁺ ions on the spectrum of valence electrons of a Si (111) single crystal

   Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.007249