Работы, цитирующие эту работу

Работ: 2

Работа: Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

1. The effect of electron beam on nanocrystallites size, strain and structural parameters of the silicon carbide nanopowder

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   СтатьяAdvanced ceramic materials synthesisInternational Journal of Modern Physics B2019Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.199232

2. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000250