Работы, цитирующие эту работу

Работ: 4

Работа: Energy levels of vacancies and interstitial atoms in the band gap of silicon

1. Radiation Stability of Nickel Doped Solar Cells

   К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

   СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 9

   ABIABI:AkademIndex/openalex/2022.article.000374

2. Radiation resistance of nickel-doped silicon solar cells

   Ismailov K.A., Kenzhaev Z.T., Koveshnikov S.V. +2

   СтатьяMaterial Properties and ApplicationsФизика твердого тела2022Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.384842

3. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

   Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002781

4. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

   Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.010909