Работы, цитирующие эту работу

Работ: 5

Работа: Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

   I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

   СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9

   ABIABI:AkademIndex/openalex/2023.article.000847

2. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

   С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

   СтатьяZnO doping and propertiesEast European Journal of Physics2024Цитирований: 7

   ABIABI:AkademIndex/openalex/2024.article.000639

3. Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

   Bahodir Kuchkarov, О. О. Маматкаримов, A. A. Abdulkhayev

   СтатьяGlass properties and applicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.001266

4. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

   I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

   СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.432352

5. Study of kinetical laws of process of the catalytic synthesis of nanocarbon from methane

   Kh.N. Kholmirzaeva, N.I. Fayzullayev, A. Abdazimov

   СтатьяCatalysis and Oxidation ReactionsE3S Web of Conferences2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.006613