Effect of the presence of a sufficiently high phosphorus concentration on the concentration distribution of gallium in silicon
Аннотация
It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P + Ga - ] are formed. It is assumed that the formation of such quasineutral molecules [P + Ga - ] stimulates the formation of Si 2 GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon. Keywords: silicon, gallium, phosphorus, binary cell, diffusion.