Study of Silicide Formation in Large Diameter Monocrystalline Silicon

To study the formation of silicides, dislocation-free ingots of single-crystalline silicon with a diameter of 65÷110 mm, grown by the Czochralski method, were used. When studying such silicon samples using electron microscopy, small-angle scattering of CO2 laser radiation, three types of defects were identified: swirl defects, impurity micro inclusions and impurity clouds. It has been shown that silicide inclusions with sizes of 8-20 μm are formed in the near-surface layer of doped silicon, and they decrease linearly deeper into the crystal. The electrical parameters of semiconductor chromium silicide were determined: resistivity 1800 μOhm·cm, thermopower coefficient 180 μV/k, Hall constant 1.2·10-2 cm3/Kl, hole concentration 6·1019 cm-3, charge carrier mobility 18.6 cm2/V·s, band gap (0.29±0.02) еV.

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